Carbon-associated Si(001)-c(4 x 4) reconstruction dosed with hydrogen

It has recently been recognized that initial carbon (C) accommodation on Si (001)-(2 x 1) surfaces (less than 1 monolayer, at 600 degrees C and using v arious C precursors) causes a c(4 x 4) surface reconstruction. In this pape r we intend to determine the C lattice sites associated to this reconstruct ion. C Is XPS signatures indicate a main contribution of C atoms dominantly located in substitutional subsurface sites and a weaker contribution, of 1 .6 eV higher binding energy, attributed to C surface sites. C Is X-ray phot oelectron diffraction polar observations along [010] azimuths ascertain C l ocation within the first five Si layers and the C atoms at the origin of th e observed angular modulations are necessarily located from the third to fi fth subsurface layers. By c(4 x 4) surface exposure to atomic hydrogen at r oom temperature, a 1 x 1 LEED diagram is restored. As for the Si(001)-(2 x 1) reconstruction, it demonstrates a break of hydrogen-saturated surface di mers. The latter may be restored by annealing but with a kinetics different from that of a simple Si dihydride desorption. These results essentially s upport c(4 x 4) reconstruction models with surface dimers including C atoms and a subsurface C-rich SinC alloy. (C) 2000 Elsevier Science B.V. All rig hts reserved.