Spectroscopic ellipsometry of oxides and interfaces thermally formed on (100)Si and (111)Si

Thin oxides and their interface, formed by dry oxidation of hydrogen-enrich ed (100)Si and (111)Si substrates via r.f. hydrogen plasma exposure at 850 degrees C. are studied by multiple-angle spectroscopic ellipsometry in the range 280-632.8 nm. Comparison with the standard oxidation of RCA cleaned S i shows that on plasma treated Si the initial oxide growth rate is higher a nd a thicker interface is formed with a different composition. Various proc esses involving hydrogen are suggested to be responsible for changes in int erface properties. (C) 2000 Elsevier Science B.V. All rights reserved.