Metal-induced gap states at InAs(110) surface

High-luminosity and high-energy-resolution photoemission spectroscopy call provide direct observation of the spectral density of metal-induced states throughout the whole band gap, even at extremely low metal deposition. We p resent a study of the density of states of a two-dimensional electron gas i nduced in the InAs(110) conduction band by deposition of caesium, antimony and silver adatoms. We follow the density of states redistribution between the two-dimensional electron-gas channel and the appearance of metal-induce d gap states. (C) 2000 Elsevier Science B.V. All rights reserved.