A kinetic scanning tunneling microscopy study of iron silicide growth on Si(113)

Citation
M. Kneppe et al., A kinetic scanning tunneling microscopy study of iron silicide growth on Si(113), SURF SCI, 454, 2000, pp. 802-806
Citations number
6
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
454
Year of publication
2000
Pages
802 - 806
Database
ISI
SICI code
0039-6028(20000520)454:<802:AKSTMS>2.0.ZU;2-M
Abstract
High-temperature kinetic scanning tunneling microscopy (STM) studies are us ed to investigate the surface morphology and growth mode of iron silicide o n Si(113) formed by gas-source reactive iron deposition with Fe(CO)(5) as p recursor. The first monolayer of silicide on Si(113) forms a (4 x n) recons truction that covers the surface completely before growth proceeds via the formation of strongly anisotropic, three-dimensional silicide islands. Afte r the first monolayer is closed, growth is slowed down by a blocked interdi ffusion with the silicon substrate and a reduced sticking probability for t he precursor. Lateral spreading of the islands is achieved by a stoichiomet ric codeposition of iron and silicon using Fe(CO)(5) and Si2H6. In this way , nearly closed layers of silicide can be grown. (C) 2000 Elsevier Science B.V. All rights reserved.