The pseudomorphic growth of alpha-Sn on InSb(100): electronic structure and morphological properties

We present a high energy-resolution photoemission study of the growth morph ology and electronic properties of alpha-Sn prepared on InSb(100), alpha-Sn (100) pseudomorphic growth proceeds in a layer-by-layer mode on the InSb(10 0)-c(8 x 2) reconstructed substrate. From 4 monolayer coverage up to about 200 monolayers, a well-ordered two-domain (2 x 1) reconstruction of the alp ha-Sn surface has been observed. The corresponding valence band shows a non -metallic character. Valence band photoemission results also are discussed in comparison with calculated surface density of states. The surface-induce d states at the alpha-Sn(100)-(2 x 1) surface are tentatively attributed to the theoretically predicted formation of asymmetric Sn-Sn dimers on the su rface. (C) 2000 Elsevier Science B.V. All rights reserved.