Electronic structure and morphology of SiC films grown on Si(111) using C-60 as a precursor

Authors
Schiavuta, P Cepek, C Sancrotti, M Pedio, M Berti, M De Salvador, D Drigo, AV
Citation
P. Schiavuta et al., Electronic structure and morphology of SiC films grown on Si(111) using C-60 as a precursor, SURF SCI, 454, 2000, pp. 827-831
Citations number
13
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
454
Year of publication
2000
Pages
827 - 831
Database
ISI
SICI code
0039-6028(20000520)454:<827:ESAMOS>2.0.ZU;2-K
Abstract
We report on the electronic, compositional and morphological properties of ultra-thin and thick SiC films produced via disruption of C-60 cages onto t he Si(111) 7 x 7 surface. The influence of the reaction temperature and the growth mode of the films have been investigated by means of photoemission spectroscopy, low energy electron diffraction, atomic force microscopy, and Rutherford backscattering. (C) 2000 Elsevier Science B.V. All rights reser ved.