The influence of the counterion on the electronic structure in doped phenylene-based materials

Citation
N. Koch et al., The influence of the counterion on the electronic structure in doped phenylene-based materials, SURF SCI, 454, 2000, pp. 1000-1004
Citations number
21
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
454
Year of publication
2000
Pages
1000 - 1004
Database
ISI
SICI code
0039-6028(20000520)454:<1000:TIOTCO>2.0.ZU;2-R
Abstract
The mechanisms of charge storage and transport in doped conjugated organic materials are a topic of interest in both fundamental and application-orien ted research. We investigated the valence electronic structure of n-doped p -sexiphenyl (6P), a model molecule for the electroluminescent polymer poly (p-phenylene). Different alkali metals and an alkaline earth metal were dep osited stepwise in situ on thin films of 6P. After each step ultraviolet ph otoemission spectra were recorded using synchrotron radiation. The evolutio n of characteristic new features within the formerly empty energy gap of 6P was observed. We conclude from our observations that negative bipolarons ( dianions) are the only charged species on a 6P surface. However, the linesh ape and energetic positions of the new intragap features varied for each do pant used. By comparing the experimental data with quantum-mechanical calcu lations on model systems, we discuss the mechanisms that could explain this phenomenon. (C) 2000 Elsevier Science B.V. All rights reserved.