Annular dark-field image simulation of the YBa2Cu3O7-delta/BaF2 interface

Authors
Citation
Jl. Lee et J. Silcox, Annular dark-field image simulation of the YBa2Cu3O7-delta/BaF2 interface, ULTRAMICROS, 84(1-2), 2000, pp. 65-74
Citations number
22
Categorie Soggetti
Multidisciplinary,"Spectroscopy /Instrumentation/Analytical Sciences
Journal title
ULTRAMICROSCOPY
ISSN journal
03043991 → ACNP
Volume
84
Issue
1-2
Year of publication
2000
Pages
65 - 74
Database
ISI
SICI code
0304-3991(200007)84:1-2<65:ADISOT>2.0.ZU;2-L
Abstract
Scanning transmission electron microscope (STEM) images of the interface of a YBa2Cu3O7-delta (YBCO)/Ba-2 thin film bilayer show a relatively wide ( a pproximate to 40 Angstrom) contrasting band at the interface when viewed ed ge-on. Simulation of annular dark-field (ADF) images of this interface reve al that a significant contribution to this wide band of contrast is due to strain from dislocations oriented perpendicular to the incident beam direct ion and this contrast cannot be explained using solely a Z-contrast interpr etation of ADF images. We believe that these are the first such calculation s which predict that the presence of a misfit dislocation network can contr ibute a significant amount of contrast to cross-section ADF images of an in terface. (C) 2000 Elsevier Science B.V. All rights reserved.