It is shown that the self-organization effects appearing during the N-
cycle deposition of In0.5Ga0.5As(12 Angstrom)/GaAs(50 Angstrom) lead t
o the formation of ordered arrays of vertically coupled quantum dots (
VCQD's). The optical properties are investigated as a function of the
number of deposition cycles (N = 1-10). In cases of injection heterost
ructure lasers with an active region based on VCQD's it is shown that
increasing the number N of deposition cycles from I to 10 makes it pos
sible to lower the threshold current density at 300 K from 950 to 97 A
/cm(2) and to achieve a continuous lasing regime at room temperature w
ith an output power of 160 mW per mirror. (C) 1997 American Institute
of Physics.