OPTICAL-PROPERTIES OF VERTICALLY COUPLED INGAAS QUANTUM DOTS IN A GAAS MATRIX

Citation
Mv. Maksimov et al., OPTICAL-PROPERTIES OF VERTICALLY COUPLED INGAAS QUANTUM DOTS IN A GAAS MATRIX, Semiconductors, 31(6), 1997, pp. 571-574
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
31
Issue
6
Year of publication
1997
Pages
571 - 574
Database
ISI
SICI code
1063-7826(1997)31:6<571:OOVCIQ>2.0.ZU;2-I
Abstract
It is shown that the self-organization effects appearing during the N- cycle deposition of In0.5Ga0.5As(12 Angstrom)/GaAs(50 Angstrom) lead t o the formation of ordered arrays of vertically coupled quantum dots ( VCQD's). The optical properties are investigated as a function of the number of deposition cycles (N = 1-10). In cases of injection heterost ructure lasers with an active region based on VCQD's it is shown that increasing the number N of deposition cycles from I to 10 makes it pos sible to lower the threshold current density at 300 K from 950 to 97 A /cm(2) and to achieve a continuous lasing regime at room temperature w ith an output power of 160 mW per mirror. (C) 1997 American Institute of Physics.