DIELECTRIC-CONSTANT AND AC CONDUCTIVITY OF SEMIINSULATING CD1-XMNXTE SEMICONDUCTORS

Plots of the temperature dependence of the dielectric constant and the ac resistance of the compounds Cd1-xMnxTe (0 less than or equal to x less than or equal to 0.7) are presented, and it is established from t hem that additional polarization of the compound is caused by hopping charge exchange among structural defects. The electron spin resonance and reflectance spectra of these materials are investigated. A model d escribing the thermally activated increase in the dielectric constant of the semiconductors is proposed. The main characteristics are determ ined, and a microscopic model of the structure of the defects whose ho pping charge exchange leads to an increase in the dielectric constant of the compensated Cd1-xMnxTe semiconductors is proposed. (C) 1997 Ame rican Institute of Physics.