ANOMALOUS DISTRIBUTION OF IRON ATOMS FOLLOWING THE SIMULTANEOUS IMPLANTATION OF CO+ AND FE+ IONS IN SILICON

Authors
GUMAROV GG PETUKHOV VY ZHIKHAREV VA SHUSTOV VA KHAIBULLIN IB
Citation
Gg. Gumarov et al., ANOMALOUS DISTRIBUTION OF IRON ATOMS FOLLOWING THE SIMULTANEOUS IMPLANTATION OF CO+ AND FE+ IONS IN SILICON, Semiconductors, 31(6), 1997, pp. 615-617
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
6
Year of publication
1997
Pages
615 - 617
Database
ISI
SICI code
1063-7826(1997)31:6<615:ADOIAF>2.0.ZU;2-Y
Abstract
An anomalous two-peaked depth profile of Fe atoms has been observed fo llowing the simultaneous implantation of Fe+ and Co+ ions in Si at low ion current densities (j less than or equal to 10 mu A/cm(2)) and a 1 :3 ratio between iron and cobalt ions in the beam. Such a profile is f ormed on condition that the time of diffusion of the iron atoms to the sinks (the surfaces and the regions of linear defects in the bulk of the sample) is shorter than the effective time for silicide formation. (C) 1997 American Institute of Physics.