FEATURES OF RADIATION-INDUCED DEFECT FORMATION IN P-TYPE SI(B,PT)

The results of an experimental study of radiation-induced defect forma tion in p-Si[B, Pt] using deep-level transient spectroscopy (DLTS) are discussed. The significant influence of the initial presence of B and Pt impurities on the efficiency of the formation of radiation centers (especially with an energy E-nu+0.36 eV) is demonstrated. This phenom enon is attributed to the presence of electrically neutral complexes c onsisting of an intrinsic interstitial atom and an impurity atom in p- type Si[B, Pt], which effectively dissociate during gamma irradiation and thereby influence the quasichemical radiation-induced defect forma tion reactions. (C) 1997 American Institute of Physics.