THE PHOTOCONDUCTIVITY OF CDXHG1-XTE (X=0.2-0.3) WITH AN ALUMINUM THIN-FILM COATING

Authors
SALAEV EY GUSEINOV EK ISMAILOV ND TEZER A
Citation
Ey. Salaev et al., THE PHOTOCONDUCTIVITY OF CDXHG1-XTE (X=0.2-0.3) WITH AN ALUMINUM THIN-FILM COATING, Semiconductors, 31(6), 1997, pp. 635-638
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
6
Year of publication
1997
Pages
635 - 638
Database
ISI
SICI code
1063-7826(1997)31:6<635:TPOC(W>2.0.ZU;2-P
Abstract
The results of an experimental investigation of the photoconductivity of n- and p-CdxHg1-xTe X (x=0.2-0.3) deposited on the surface of alumi num thin films are presented. The results obtained are analyzed with a llowance for the influence of the surface space-charge region and the recombination process in it. The values of the rate of surface recombi nation and the surface mobility of the charge carriers are determined from measurements of the photoconductivity and the barrier photocurren t. (C) 1997 American Institute of Physics.