TEMPERATURE-DEPENDENCE OF THE PHOTOLUMINESCENCE OF POROUS SILICON

Authors
KASHKAROV PK KONSTANTINOVA EA PETROVA SA TIMOSHENKO VY YUNOVICH AE
Citation
Pk. Kashkarov et al., TEMPERATURE-DEPENDENCE OF THE PHOTOLUMINESCENCE OF POROUS SILICON, Semiconductors, 31(6), 1997, pp. 639-641
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
6
Year of publication
1997
Pages
639 - 641
Database
ISI
SICI code
1063-7826(1997)31:6<639:TOTPOP>2.0.ZU;2-D
Abstract
The photoluminescence of porous silicon in the temperature range from 300 to 400 K is investigated. It is shown that the experimental result s are explained well on the basis of a model of the radiative recombin ation of excitons in silicon nanostructures. According to numerical es timates obtained by comparing the experimental and calculated curves, the exciton binding energy is 0.2 eV. (C) 1997 American Institute of P hysics.