Second-harmonic spectroscopy of bulk boron-doped Si(001)

The effect of bulk boron incorporation on the second-harmonic generation (S HG) spectrum of Si(001) films grown epitaxially by chemical vapor depositio n is studied as a function of doping level and temperature. At room tempera ture, boron doping (N-A similar to 10(18) cm(-3)) strongly enhances and blu eshifts the E-1 resonance of the second-harmonic generation spectra to 3.4 eV. Surface hydrogen termination reverses this effect. The observed doping and temperature dependence are modeled as electric-field-induced SHG in the bulk depletion region. The results suggest applications of SHG as an in si tu, noninvasive probe of electrically active dopants. (C) 2000 American Ins titute of Physics. [S0003-6951(00)04828-2].