Green II-VI light emitting diodes with long lifetime on InP substrate

We demonstrate that the quaternary compound ZnMgSeTe can be grown by molecu lar beam epitaxy in reasonable quality. For layers with energy gaps as high as 3.1 eV, nitrogen doping leads to free hole concentrations around 10(18) cm(-3). In combination with n-ZnMgCdSe, this material allows the fabricati on of II-VI diodes lattice matched to InP substrate. Light emitting diodes containing a tensile strained ZnCdSe quantum well in ZnMgCdSe emit green li ght when operated in forward direction. In contrast to diodes with a compar able density of extended defects grown on GaAs substrate, these diodes show no formation of dark line defects and a lifetime which is about three orde rs of magnitude longer. (C) 2000 American Institute of Physics. [S0003-6951 (00)05528-5].