Ion-beam synthesis of epitaxial silicon carbide in nitrogen-implanted diamond

Natural IIa diamond was implanted at 90 keV to 1 x 10(15) N+/cm(2) and subs equently at 150 keV to 3 x 10(17) Si+/cm(2) at a temperature of 900 degrees C. The structure of the implanted diamond region was investigated by high- resolution cross-sectional transmission electron microscopy, Raman, and inf rared absorption spectrometry. A buried layer with crystalline 3C-SiC domai ns in perfect epitaxial relation to the diamond substrate was detected. Amo rphization and graphitization were completely prevented by the elevated tem perature during the implantation. Resistance measurements demonstrated low electrical resistivity in the implanted regions. (C) 2000 American Institut e of Physics. [S0003-6951(00)03328-3].