Electrical properties of rapid thermal oxides on Si1-x-yGexCy films

The electrical characteristics of rapid thermal oxides on Si1-x-yGexCy laye rs are reported. X-ray photoelectron spectroscopy results indicate segregat ion of Ge at the SiO2/Si1-x-yGexCy interface, a thin GeO2 layer at the oxid e surface, and elemental Ge at the interface and in the oxide. The interfac e state density of the samples ranges from 3.0 x 10(11) to 3.6 x 10(12) eV( -1) cm(-2). All the samples show electron trapping behavior and the trap ge neration rate decreases with increasing C concentration. The charge-to-brea kdown value and the oxide breakdown field are higher for Si0.887Ge0.113 tha n for Si1-x-yGexCy samples, and these values decrease with increasing C con centration. (C) 2000 American Institute of Physics. [S0003-6951(00)01928-8] .