Scheme for the fabrication of ultrashort channel metal-oxide-semiconductorfield-effect transistors

We present a scheme for the fabrication of ultrashort channel length metal- oxide-semiconductor field-effect transistors (MOSFETs) involving nanolithog raphy and molecular-beam epitaxy. The active channel is undoped and is defi ned by a combination of nanometer-scale patterning and anisotropic etching of an n(++) layer grown on a silicon on insulator wafer. The method is self -limiting and can produce MOSFET devices with channel lengths of less than 10 nm. Measurements on the first batch of n-MOSFET devices fabricated with this approach show very good output characteristics and good control of sho rt-channel effects. (C) 2000 American Institute of Physics. [S0003-6951(00) 01727-7].