Effects of Si doping on ordering and domain structures in GaInP

The effects of Si doping on ordering and domain structures in GaInP grown b y organometallic vapour phase epitaxy on (001) GaAs singular and vicinal su bstrates at 620 degrees C have been investigated by transmission electron m icroscopy (TEM) and transmission electron diffraction (TED). TEM results sh ow that the behaviour of antiphase boundaries (APBs) in the singular sample s differs from that of the vicinal samples. As the carrier concentration in creases, the density of APBs in the vicinal samples increases slightly, whi lst that of the singular samples varies insignificantly. APBs are inclined some degrees from the [001] growth surface. TEM results show that for the h ighly doped samples, the ordered domains contain dark mottled contrast corr esponding to either much less ordered regions or disordered regions. TED re sults show that the ordering is present in layers exceeding a concentration of similar to 2.0 X 10(18) cm(-3). (C) 2000 Elsevier Science B.V. All righ ts reserved.