Interface analysis of CVD diamond on TiN surfaces

We prepared polycrystalline diamond thin films on smooth silicon substrates with the help of a titanium nitride (TiN) buffer layer. TiN layers of diff erent thickness were deposited first on crystalline silicon substrates with mirror finish. The TiN layers were placed by physical vapor deposition (PV D) assisted by direct current reactive magnetron sputtering. Later, diamond thin films were grown by hot filament chemical vapor deposition (HF-CVD). Scanning electron microscopy observations show a notable increase in the si ze of diamond particles on the substrates with the TiN buffer layer, as opp osed to the plain, only scratched substrates. The diamond films were charac terized by high-resolution transmission electron microscopy (HRTEM), electr on energy loss (EELS) and energy dispersive spectroscopies (EDS). A buffer layer similar to 0.8 nm thick is observed between the diamond particles and the TiN layer. EDS experiments reveal a carbon nitride compound at the int erphase. There is no evidence of degradation (cracking, delamination, etc.) of the TiN layers for thickness below 0.5 mu m. (C) 2000 Elsevier Science B.V. All rights reserved.