Amorphous carbon nitride (a-C:N) films were deposited by reactive direct cu
rrent magnetron sputtering of graphite using a gaseous mixture of Ar and N-
2. X-ray photo electron spectroscopy analysis (XPS) showed that there is an
optimum volume ratio of nitrogen:argon in the sputter gas that results in
a maximum content of incorporated nitrogen in the films. By using different
take-off angles in XPS experiments, the variation gradient of bonding stru
cture near the surface of a-C:N films has also been studied. In the surface
layer of the a-C:N films, it was found that some of the initially formed b
eta-C3N4-like phase transforms to a graphite-like carbon-nitrogen phase. Th
is structural change is driven by the nitrogen in the sputter gas during de
position. (C) 2000 Elsevier Science B.V. All rights reserved.