Variation of bonding structure near the surface of carbon nitride films

Citation
Ld. Jiang et al., Variation of bonding structure near the surface of carbon nitride films, APPL SURF S, 158(3-4), 2000, pp. 340-344
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
158
Issue
3-4
Year of publication
2000
Pages
340 - 344
Database
ISI
SICI code
0169-4332(200005)158:3-4<340:VOBSNT>2.0.ZU;2-P
Abstract
Amorphous carbon nitride (a-C:N) films were deposited by reactive direct cu rrent magnetron sputtering of graphite using a gaseous mixture of Ar and N- 2. X-ray photo electron spectroscopy analysis (XPS) showed that there is an optimum volume ratio of nitrogen:argon in the sputter gas that results in a maximum content of incorporated nitrogen in the films. By using different take-off angles in XPS experiments, the variation gradient of bonding stru cture near the surface of a-C:N films has also been studied. In the surface layer of the a-C:N films, it was found that some of the initially formed b eta-C3N4-like phase transforms to a graphite-like carbon-nitrogen phase. Th is structural change is driven by the nitrogen in the sputter gas during de position. (C) 2000 Elsevier Science B.V. All rights reserved.