Pulsed laser deposition of epitaxial titanium nitride on MgO(001) monitored by RHEED oscillation

Citation
K. Inumaru et al., Pulsed laser deposition of epitaxial titanium nitride on MgO(001) monitored by RHEED oscillation, APPL SURF S, 158(3-4), 2000, pp. 375-377
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
158
Issue
3-4
Year of publication
2000
Pages
375 - 377
Database
ISI
SICI code
0169-4332(200005)158:3-4<375:PLDOET>2.0.ZU;2-8
Abstract
Titanium nitride was grown epitaxially on MgO(001) by a pulsed laser deposi tion (PLD) method, and the oscillations of reflection high energy electron diffraction (RHEED) for this system were observed for the first time. The R HEED patterns and atomic force microscope (AFM) analysis revealed the two-d imensional growth of highly flat TiN films. The high-resolution reciprocal space mapping of X-ray diffraction of the TiN film showed that the lattice dimensions of the TST shrunk along the plane parallel to the surface of the MgO(001) substrate by 0.6% with no structural relaxation and no mosaic dis order, demonstrating the deposition of the high-quality epitaxial film. (C) 2000 Elsevier Science B.V. All rights reserved.