Space-charge-limited conduction in thin film Al/Sb2Pb1Se7/Al devices

Authors
Wagle, S Shirodkar, V
Citation
S. Wagle et V. Shirodkar, Space-charge-limited conduction in thin film Al/Sb2Pb1Se7/Al devices, BRAZ J PHYS, 30(2), 2000, pp. 380-385
Citations number
17
Categorie Soggetti
Physics
Journal title
BRAZILIAN JOURNAL OF PHYSICS
ISSN journal
01039733 → ACNP
Volume
30
Issue
2
Year of publication
2000
Pages
380 - 385
Database
ISI
SICI code
0103-9733(200006)30:2<380:SCITFA>2.0.ZU;2-V
Abstract
Thin film Al/Sb2Pb1Se7/Al, MGM, sandwiched structures, prepared using therm al evaporation technique have been studied. The DC measurements at low elec tric field suggest that the electrical transport is governed by space charg e limited conduction (SCLC) mechanism. The detailed analysis of current-vol tage limited conduction (SCLC) mechanism characteristics on the basis of SC LC theory reveals the presence of uniformly distributed trap density of the order of 10(23) m(-3) eV(-1) with average activation energy 0.48 eV.