RADIATION EFFECTS IN THIN-FILM FERROELECTRIC PZT FOR NONVOLATILE MEMORY APPLICATIONS IN MICROELECTRONICS

This paper deals with ionising radiation effects (X or gamma-rays) in ferroelectric materials for electronic non-volatile memories. After th e recall of main observations, mechanisms are analysed and proposed to take into account the effects in PZT-based capacitors. Fatigue of the hysteresis cycle are studied and linked to irradiation effects. As fo r irradiation, fatigue shows a damping of hysteresis curves. We show t hat a connection exists between fatigue and irradiation. A mechanism i s proposed based on domain wall motion and pinning.