Anodization of Al3Zr intermetallic compound film and its application to the preparation of thin-film capacitors with high reliability

Citation
H. Inada et al., Anodization of Al3Zr intermetallic compound film and its application to the preparation of thin-film capacitors with high reliability, ELEC C JP 2, 83(7), 2000, pp. 1-8
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
ISSN journal
8756663X → ACNP
Volume
83
Issue
7
Year of publication
2000
Pages
1 - 8
Database
ISI
SICI code
8756-663X(2000)83:7<1:AOAICF>2.0.ZU;2-3
Abstract
By using stoichiometric, low-resistivity intermetallic compound composed of valve metals, it is expected that anodized capacitors with high heat resis tance and high reliability can be realized. We therefore prepared a stoichi ometric Al3Zr film by co-sputtering an Al-Zr composite target, and the elec trical properties of the Al3Zr anodized capacitor were compared with those of Al3Hf capacitor from the viewpoints of reduction of oxide thickness and heat tolerance. It is shown that Al3Zr anodized film is also a very promisi ng material for high-reliability thin-film capacitors, alongside Al3Hf capa citors. (C) 2000 Scripta Technica.