H. Inada et al., Anodization of Al3Zr intermetallic compound film and its application to the preparation of thin-film capacitors with high reliability, ELEC C JP 2, 83(7), 2000, pp. 1-8
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
By using stoichiometric, low-resistivity intermetallic compound composed of
valve metals, it is expected that anodized capacitors with high heat resis
tance and high reliability can be realized. We therefore prepared a stoichi
ometric Al3Zr film by co-sputtering an Al-Zr composite target, and the elec
trical properties of the Al3Zr anodized capacitor were compared with those
of Al3Hf capacitor from the viewpoints of reduction of oxide thickness and
heat tolerance. It is shown that Al3Zr anodized film is also a very promisi
ng material for high-reliability thin-film capacitors, alongside Al3Hf capa
citors. (C) 2000 Scripta Technica.