High-performance 1,6 mu m single-epitaxy top-emitting VCSEL

Authors
Yuen, W Li, GS Nabiev, RF Boucart, J Kner, P Stone, RJ Zhang, D Beaudoin, M Zheng, T He, C Yu, K Jansen, M Worland, DP Chang-Hasnain, CJ
Citation
W. Yuen et al., High-performance 1,6 mu m single-epitaxy top-emitting VCSEL, ELECTR LETT, 36(13), 2000, pp. 1121-1123
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
13
Year of publication
2000
Pages
1121 - 1123
Database
ISI
SICI code
0013-5194(20000622)36:13<1121:H1MMST>2.0.ZU;2-F
Abstract
The first single-epitaxy top-emitting vertical-cavity surface-emitting lase r emitting in the 1.55-1.61 mu m wavelength region is reported. CW operatio n is achieved up to 55 degrees C with an optical power of 0.45mW obtained a t 25 degrees C. Error free transmission by these lasers at 2.5Gbit/s is obt ained over 50km of singlemode fibre without the need for optical amplificat ion.