GaNN- and P-type Schottky diodes: Effect of dry etch damage

The reverse breakdown voltage (V-B) and forward turn-on voltage (V-F) Of n- and p-GaN Schottky diodes were used to examine the effects of Cl-2/Ar and Ar plasma damage. Even short plasma exposures (4 secs) produced large chang es in both V-B and V-F, with ion mass being a critical factor in determinin g the magnitude of the changes. The damage depth was established to be 500- 600 Angstrom and the damaged material could be removed in boiling NaOH solu tions, producing a full recovery of the diode properties. Annealing at 700 to 800 degrees C under N-2 produced only a partial recovery of V-B and V-F.