Yk. Su et al., The red shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents, IEEE DEVICE, 47(7), 2000, pp. 1330-1333
The reliable n(+)-ZnSSe metal-semiconductor-metal (MSM) blue-green light em
itting diodes (LED's) have been fabricated. The contact metal was CuGe/Pt/A
u. The current transport mechanisms agree very well with the back to back t
unneling diodes. The kink phenomena mere observed in the MSM current-voltag
e curves. In the metal-semiconductor interface, the element Zn in ZnSSe can
be replaced by Cu results in some acceptor levels as radiative recombinati
on centers in the MS interface. The peak wave-length in the LED electrolumi
nescent (EL) spectra was strongly dependent on the injection currents from
5 to 40 mA. The peak wavelength and full width at half maximum are 510 and
10 nm, respectively, at 10 mA injection current. When the injection current
increases to 15 mA, the peak wavelength shifted to 530 nm due to different
recombination centers. Further increasing the injection currents, the peak
wavelength shifted slightly to the long wavelength side.