1/f noise model of fully overlapped lightly doped drain MOSFET

Authors
Kumar, A Kalra, E Haldar, S Gupta, RS
Citation
A. Kumar et al., 1/f noise model of fully overlapped lightly doped drain MOSFET, IEEE DEVICE, 47(7), 2000, pp. 1426-1430
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
47
Issue
7
Year of publication
2000
Pages
1426 - 1430
Database
ISI
SICI code
0018-9383(200007)47:7<1426:1NMOFO>2.0.ZU;2-L
Abstract
This paper presents an analytical 1/f noise model of fully overlapped light ly doped drain MOSFET incorporating the voltage drop in the n(-) region due to the parasitic resistance. The FOLD structure has lesser noise effect th an LDD MOSFET and the predicted results are verified with experimental data .