Accurate contact resistivity extraction on Kelvin structures with upper and lower resistive layers

An accurate procedure to extract contact resistivity from contact resistanc e measurements made on both D-resistor and L-resistor type Kelvin cross tes t structures with both upper and lower resistive layers is presented, Throu gh computer simulation it can be shown that the collar effects of both uppe r and lower layers are additive when both layers have a symmetric geometry, The method is based on the determination of a set of "universal curves" th rough computer simulation, Using dimensionless variables, these curves can be employed in all experimental conditions, eliminating the need of further simulations.