A novel lateral bipolar transistor with 67 GHz f(max) on thin-film SOI forRF analog applications

In this paper, a novel lateral bipolar transistor on thin film silicon-on-i nsulator (SOI) is presented. With a small emitter size of 0.12 x 3.0 mu m(2 ),low base resistance of 270 Omega due to a novel Co silicided base electro de and low base-collector parasitic capacitances of 1.4 fF due to SOI mater ial achieve the highest f(max) of 67 GHz among the SOI bipolar transistors. Also, the low emitter-base capacitance of 1.5 fF and the low collector-sub strate capacitance of 2.5 fF are realized. The transistor has a simple stru cture, which is fabricated with simplified processes without any new sophis ticated technologies, ex. trench isolation and epitaxial base used in curre nt bipolar transistors. This can lower the fabrication cost of transistors. We have demonstrated the possibility of lateral bipolar transistor on thin film SOI as next-generation device for RF analog applications.