InP/InGaAs uni-traveling-carrier photodiodes

Citation
T. Ishibashi et al., InP/InGaAs uni-traveling-carrier photodiodes, IEICE TR EL, E83C(6), 2000, pp. 938-949
Citations number
33
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEICE TRANSACTIONS ON ELECTRONICS
ISSN journal
09168524 → ACNP
Volume
E83C
Issue
6
Year of publication
2000
Pages
938 - 949
Database
ISI
SICI code
0916-8524(200006)E83C:6<938:IUP>2.0.ZU;2-J
Abstract
This paper reviews the operation, design, and performance of the uni-travel ing-carrier-photodiode (UTC-PD). The UTC-PD is a new type of photodiode tha t uses only electrons as its active carriers and its prime feature is high current operation. A small signal analysis predicts that a UTC-PD can respo nd to an optical signal as fast as or faster than a pin-PD. A comparison of measured pulse photoresponse data reveals how the saturation mechanisms of the UTC-PD and pin-PD differ. Applications of InP/InGaAs UTC-PDs as optoel ectronic drivers are also presented.