Transport properties of a GaAs/AlGaAs ring interferometer in the tunnelingregime

Authors
Bykov, AA Baksheev, DG Litvin, LV Migal', VP Ol'shanetskii, EB Casse, M Maude, DK Portal, JC
Citation
Aa. Bykov et al., Transport properties of a GaAs/AlGaAs ring interferometer in the tunnelingregime, JETP LETTER, 71(10), 2000, pp. 434-437
Citations number
19
Categorie Soggetti
Physics
Journal title
JETP LETTERS
ISSN journal
00213640 → ACNP
Volume
71
Issue
10
Year of publication
2000
Pages
434 - 437
Database
ISI
SICI code
0021-3640(2000)71:10<434:TPOAGR>2.0.ZU;2-1
Abstract
The transport properties of GaAs/AlGaAs submicron rings with split gates in the conditions corresponding to the ring resistance R-SD > h/e(2) are stud ied. Oscillations of R-SD as a function of the gate voltage V-G are experim entally observed. The oscillations are caused by the single-electron chargi ng of two triangular conducting regions into which the ring is divided in t he tunneling regime. (C) 2000 MAIK "Nauka/Interperiodica".