mu(-)spin rotation study of the temperature-dependent relaxation rate of acceptor centers in silicon

Temperature-dependent remanent polarization of negative muons in a silicon crystal doped with phosphorus (3.2 x 10(12), 2.3 x 10(15), and 4.5 x 10(18) cm(-3)) and aluminum (2 x 10(14) and 2.4 x 10(18) cm(-3)) was examined. Me asurements were made over the temperature range 4-300 K in a magnetic field of 2000 G perpendicular to the muon spin. Temperature dependence of the re laxation rate was determined for the magnetic moment of a shallow Al accept or center in a nondeformed silicon sample, and the hyperfine interaction co nstant was estimated for the interaction between the magnetic moments of mu on and electron shell of the muonic mu Al atom in silicon. (C) 2000 MAIK "N auka/Interperiodica".