MBE growth and characterization of ZnTe epilayers and ZnCdTe/ZnTe structures on GaAs(100) and ZnTe(100) substrates

Deposition of an amorphous ZnTe seed layer with a thickness of 10 nm follow ed by its solid-phase crystallization was done before the beginning of mole cular beam epitaxy of ZnTe layers on GaAs(1 0 0) substrates. RHEED patterns have proved that a creation of three-dimensional formations is avoided, an d two-dimensional growth occurs during the early stage of epitaxy. Cathodol uminescence (CL) and X-ray measurements have evidenced a higher quality of ZnTe layers grown with an amorphous ZnTe seed layer. ZnTe substrates made o f ZnTe crystals grown from vapor phase have been used for the epitaxy of Zn Te layers and ZnCdTe/ZnTe structures also. CL comparison of homo- and heter oepitaxial layers and structures shows the superiority of epilayers and str uctures grown on ZnTe(1 0 0) substrates. (C) 2000 Elsevier Science B.V. All rights reserved.