ZnO growth on Si by radical source MBE

Authors
Iwata, K Fons, P Niki, S Yamada, A Matsubara, K Nakahara, K Tanabe, T Takasu, H
Citation
K. Iwata et al., ZnO growth on Si by radical source MBE, J CRYST GR, 214, 2000, pp. 50-54
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
214
Year of publication
2000
Pages
50 - 54
Database
ISI
SICI code
0022-0248(200006)214:<50:ZGOSBR>2.0.ZU;2-0
Abstract
The key to grow ZnO on Si by radical source (RS)-MBE is surface nitridation of the Si substrate. Growth of ZnO on Si(1 1 1) has been carried out using NH, plasma nitridation of the Si surface prior to ZnO growth and strongly c-axis-orientated ZnO thin films were obtained. Strong excitonic PL emissio n around 3.38 eV was observed from ZnO on Si while Hall measurements showed n-type conductivity with an electron concentration of 1.87 x 10(18) cm(-3) . (C) 2000 Elsevier Science B.V. All rights reserved.