ZnO thin films prepared by remote plasma-enhanced CVD method

High-quality ZnO films were successfully prepared by a remote plasma-enhanc ed CVD of Zn(C2H5)(2) and carbon dioxide, Plasma excitation in carbon dioxi de was critically important to deposit films with good crystallinity. Epita xial growth could be achieved on (0002) or (0 1 (1) over bar 2) oriented si ngle-crystal sapphire substrates using this simple system. Reflection high- energy electron diffraction and X-ray diffraction patterns show that the Zn O(1 1 (2) over bar 0) plane is formed on the sapphire (0 1 (1) over bar 2) plane and the ZnO(0 0 0 2) plane is formed on the sapphire (0 0 0 2) plane. Cathodoluminescence spectra of the epitaxial films grown at plasma dischar ge voltage of 3.6 kV consist of a sharp band at 380 nm and a broad band cen tered at 620nm. (C) 2000 Elsevier Science B.V. All rights reserved.