New type of ZnCdS/ZnMgCdS heterostructures lattice-matched to GaAs for selective-area growth

A new type of heterostructure ZnCdS/ZnMgCdS that can be grown lattice-match ed to a GaAs substrate and is compatible with the selective area growth at very low temperature is proposed. The growth was performed by metalorganic molecular-beam epitaxy. Selective-area growth was performed using a carbona ceous mask and was successful for the Se-free, ZnCdS ternary and ZnMgCdS qu aternary alloys starting as low as 360 degrees C. A heterostructure lattice -matched to GaAs, with at least 470-meV energy band-gap difference was conf irmed experimentally. (C) 2000 Elsevier Science B.V. All rights reserved.