In situ reflectance difference spectroscopy of intra-Mn transitions in highly N-doped II-VI diluted magnetic semiconductors

On the II-VI-bascd diluted magnetic semiconductor ZnMnTe heavily p-doped wi th N, in situ reflectance difference spectroscopy (RDS) was performed durin g and upon the epitaxial growth. It was possible to observe below and in th e band-gap region features occurring from intra-Mn d-level transitions. In undoped materials the spectroscopic window for observation may open only fo r high values of magnetic ions concentration, whereas in doped crystals it was possible to detect the transitions at growth temperature and at Mn conc entrations as low as 2%. (C) 2000 Elsevier Science B.V. All rights reserved .