Growth of hexagonal ZnCdS on GaAs(111)B and (001) substrates by MBE

The realization of wurtzite structure II-VI material would overcome the pro blem associated with the lifetime of the devices. ZnCdS epilayers were grow n on GaAs(0 0 1) and(1 1 1)B substrates, and crystal structure was controll ed, ZnCdS eyilayers grown on GaAs(0 0 1) substrates showed slight signs of the wurtzite phase. Phi (phi) scan of the X-ray diffraction was performed, and ZnCdS epilayers grown on GaAs(1 1 1)B substrates showed mixed crystal s tructures. The substrate temperature and the Cl doping would affect the vol ume ratio of the wurtzite structure. (C) 2000 Published by Elsevier Science B.V. All rights reserved.