Selective-area growth of ZnSe on patterned GaAs(001) substrates by molecular beam epitaxy

The selective-area growth of ZnSe is performed by molecular beam epitaxy on oxide-masked GaAs(0 0 1) substrates. Single-crystalline layers are obtaine d on a bare surface of the GaAs substrate, while poly-crystalline layers ar e deposited on an SiO2-covered region. The growth rate of a single-crystall ine layer is faster than that of a poly-crystalline layer at least up to a substrate temperature of 340 degrees C. The difference in growth rate incre ases with increasing the substrate temperature. The low-temperature photolu minescence of a single-crystalline layer shows dominant excitonic emission. (C) 2000 Elsevier Science B.V. All rights reserved.