The minority carrier mobility of HgCdTe measured by the modulated Hall effect

The apparatus of the modulated Hall effect using laser-chopping technique w as set up to measure the minority carrier mobility of p-type HgCdTe grown b y Rotating technique. The measurements for the Fourier transform infrared ( FTIR) spectroscopy and the Hall effect of p-type HgCdTe was carried out. On e of the as-grown NgCdTe samples was converted into n-type through Hg annea ling to see if the value of the minority carrier mobility measured by the m odulated Hall effect is the same with the majority carrier mobility of the n-type HgCdTe. This converted sample was characterized by FTIR and Hall eff ect measurement. The modulated Hall effect was measured by changing the mag netic field of 0-0.45 T over the temperature range from 77 to 150 K. (C) 20 00 Elsevier Science B.V. All rights reserved.