Comparison of physical passivation of Hg1-xCdxTe

Citation
Wb. Sang et al., Comparison of physical passivation of Hg1-xCdxTe, J CRYST GR, 214, 2000, pp. 265-268
Citations number
7
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
214
Year of publication
2000
Pages
265 - 268
Database
ISI
SICI code
0022-0248(200006)214:<265:COPPOH>2.0.ZU;2-6
Abstract
The interface properties between well-polished MCT and ZnS layers deposited by three different physical techniques, and DLC prepared by RFPCVD, have b een investigated by AES, IRTS, etc. ZnS and DLC films can prevent the outwa rd diffusion of the components in MCT. However, Zn and S in the ZnS layer t end to diffuse into the MCT, especially, the S diffuses deeper in the case of EBV, and O is detected especially after PLD, but C in the DLC layer diff uses only slightly into the MCT. In particular, the IR transmission of the MCT with deposited DLC is obviously raised, and higher than that of the MCT with deposited ZnS at least in the range of 7.1-7.5 mu m. (C) 2000 Elsevie r Science B.V. All rights reserved.