Structural characterization of MBE-grown HgSe : Fe layers: X-ray diffraction and Raman spectroscopy

In this work, MBE-grown quasi-pseudomorphic Fe-doped HgSe layers are invest igated by X-ray diffraction and Raman spectroscopy. The crystal quality and the strain state of the epilayers are determined by X-ray diffraction meas urements. Raman scattering spectra obtained for the layers are very similar to those taken for the bulk, Fe-doped HgSe samples. The observation of a s mall frequency shift of the TO-phonon structure on various layers confirms the presence of the strain effects. (C) 2000 Elsevier Science B.V. All righ ts reserved.