H. Kumano et al., Luminescence properties of ZnO films grown on GaAs substrates by molecular-beam epitaxy excited by electron-cyclotron resonance oxygen plasma, J CRYST GR, 214, 2000, pp. 280-283
Growth of ZnO films on GaAs(0 0 1) substrates is demonstrated using ZnS buf
fer layers by metalorganic molecular-beam epitaxy excited by electron-cyclo
tron resonance oxygen plasma. Bright near band-edge luminescence was observ
ed at room temperature and the deep-level emission was found to make little
contribution to the optical spectrum. The Stokes shift of the luminescence
measured at 15 K with the photoluminescence excitation spectrum was almost
absent. These distinguished features are the clear manifestations of the q
uite high optical quality of the ZnO films grown on GaAs substrates. (C) 20
00 Elsevier Science B.V. All rights reserved.