BeTe-ZnSe type-II heterojunctions

Citation
A. Waag et al., BeTe-ZnSe type-II heterojunctions, J CRYST GR, 214, 2000, pp. 316-320
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
214
Year of publication
2000
Pages
316 - 320
Database
ISI
SICI code
0022-0248(200006)214:<316:BTH>2.0.ZU;2-7
Abstract
BeTe-ZnSe heterojunctions are interesting model systems, where the interfac e is made of materials which are almost lattice matched, but have no common anion nor cation. As a consequence, there are two interface configurations , which are basically reflected by a "ZnTe" and a "BeSe" interfacial layer. To a certain extent, the interface configuration can be controlled by the MBE growth mode, and has an important impact on structural, electronical an d optical properties of the heterojunction. The two possible interface conf igurations drastically influence the strain state and the band offset. The averaged lattice constant of small period BeTe-ZnSe superlattices can be us ed for an analysis of the interface composition. Spatially indirect electro n-hole recombination is linearly polarized due to the particular bond orien tation at the interface. Surface emitting type-II LEDs with a linear polari zed emission have been fabricated. (C) 2000 Elsevier Science B.V. All right s reserved.