II-VI quantum structures with tunable electron g-factor

Citation
T. Wojtowicz et al., II-VI quantum structures with tunable electron g-factor, J CRYST GR, 214, 2000, pp. 378-386
Citations number
22
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
214
Year of publication
2000
Pages
378 - 386
Database
ISI
SICI code
0022-0248(200006)214:<378:IQSWTE>2.0.ZU;2-4
Abstract
We review results of magnetooptical studies related to various methods of " spin splitting engineering" possible in quantum well (QW) structures made o f II-VI diluted magnetic semiconductors (DMS). The experiments made use of unique structures, based on Cd1-x-yMnxMgyTe, with a precise in-plane profil ing of either QW width or n-type doping intensity and of structures with di gital profiling of the composition of constituent materials in the growth d irection. The most typical version of the spin splitting engineering, avail able also in bulk DMSs, namely the one via an adjustment of (homogeneous) M n composition, or via the lattice temperature or/and a magnetic field, was used to study magnetooptical properties of QW containing electrons as a fun ction of their g-factor (tuned from g(ett)* = -1.46 + 55!). We also demonst rate three further methods of modifying the spin splitting in low-dimension al structures made of DMSs. They involve: (i) atomically precise control ov er Mn ion spatial distribution in the growth direction, (ii) reduction of t he s-d exchange constant with increasing electron confinement, (iii) modifi cation of MII spin temperature by the electron gas heated by photo-excited carriers. (C) 2000 Elsevier Science B.V. All rights reserved.