Carrier-induced ferromagnetic interactions in p-doped Zn(1-x)MnxTe epilayers

p-type doping of molecular-beam-epitaxy grown layers of the diluted magneti c semiconductor Zn(1-X)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the transport properties (metal-insulator transition, spin-depende nt Hall effect). In spite of the weak localization of the carriers at low t emperature, the holes clearly induce a ferromagnetic interaction between th e localized spins, which is discussed as a function of Mn content and hole concentration. (C) 2000 Elsevier Science B.V. All rights reserved.