D. Seghier et al., Direct observation of hydrogen passivation of nitrogen-related energy levels in ZnSe and ZnSxSe1-x grown by MBE, J CRYST GR, 214, 2000, pp. 478-481
The effect of hydrogenation on the electrical properties of N-doped ZnSe an
d ZnSxSe1-x films grown by molecular-beam epitaxy is investigated. Hydrogen
ation of samples with a net acceptor density (N-a - N-d) around (2-5) x 10(
16) cm(-) 3 decreases the net acceptor density close to the surface and the
peak height in deep-level transient spectra of the dominating nitrogen acc
eptor with activation energies 110 and 120 meV in ZnSe and ZnS0.08Se0.82 th
in films, respectively. Samples with N-a - N-d in the 10(17)cm(-3) range di
d not exhibit such changes, while samples with N-a - N-d less than few time
s 10(16) cm(-3) became highly resistive. (C) 2000 Elsevier Science B.V. All
rights reserved.